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NTMFS4707N
TYPICAL CHARACTERIZATIONS
1600
1400
1200
1000
V DS = 0 V
C ISS
C RSS
V GS = 0 V
C ISS
T J = 25 ° C
5
4
3
V GS = 4.5 V
Q GS
Q T
Q GD
800
600
400
C OSS
2
1
200
0
10
5
V GS
0
V DS
C RSS
5
10
15
20
25
0
0
2
I D = 10 A
T J = 25 ° C
4 6 8
Q G , TOTAL GATE CHARGE (nC)
10
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
100
V DD = 15 V
I D = 1 A
V GS = 4.5 V
18
15
V GS = 0 V
T J = 25 ° C
12
10
t d(off)
t d(on)
t f
t r
9
6
3
1
1
10
100
0
0
0.2
0.4
0.6
0.8
1
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
10 m s
100 m s
1 ms
10 ms
350
300
250
200
150
I D = 7 A
100
0.1
0.01
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
50
0
25
50
75
100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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